| PART |
Description |
Maker |
| 3DD5287C-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287C FOR LOW FREQUENCY
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287C FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2103 3DD2103-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2103 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5039 3DD5039-O-HF-N-B |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5040 3DD5040-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2109 3DD2109-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRGPC20K |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
| IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT
|
International Rectifier
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| BUZ101S Q67040-S4013-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
SIPMOS ? Power Transistor
INDUCTOR SHIELDED 470UH 20% SMT
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
http://
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
